09:30 - 10:00

2D-Experimental Pilot Line: Final Project Outcome​

Inge Asselberghs (imec, BE)

​The 2D-Experimental Pilot Line (2D-EPL) project is part of the larger Graphene Flagship activity and has now finished its final year. The projects’ ambitious goal is to start building a European ecosystem for the fabrication of 2D materials-based devices applicable in sensor, photonic and electronic applications. In the fist project pillar all activities are handled to establish dedicated equipment and processes for 2D materials integration which are applicable to graphene and transition metal dichalcogenides. In the parallel pillar, prototyping services are offered by multi project wafer (MPW) runs to pilot line customers. During this presentation, we will report on our findings established within the project consortium.

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10:00 - 10:30

Advances on 2D Materials Growth​

Benjamin Groven (imec, BE)

Future manufacturable deposition approaches for semiconductors need to provide solutions to mitigate defective grain boundaries in semiconductors. Grain boundaries limit the fabrication of highly performing semiconductor devices with two-dimensional semiconductors for industry’s Aangstrom technology nodes. Therefore, in this presentation, we review two deposition approaches to reduce crystal grain boundaries in two-dimensional semiconductors molybdenum and tungsten disulfide (MoS2, WS2) during chemical vapor deposition (CVD). We explore how the number of crystal grain boundaries can be modulated through substrate design and CVD precursor chemistry, enabling further integration in a 300 mm industrial pilot line. 

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10:30 - 11:00 

Insulators for Devices Based on 2D Materials​

Tibor Grasser (TU Wien, AT)​

Despite the breathtaking progress already achieved for 2D electronic devices, they are still far from exploiting their predicted performance potential. This is in part due to the lack of scalable insulators as their selection, fabrication, and characterization represent an enormous challenge. In order to achieve competitive device performance, these insulators need to meet stringent requirements regarding (i) low gate leakage currents, (ii) low density of interface traps, (iii) low density of border insulator traps and (iv) high dielectric strength.  This talk will address the current state of the art and summarize the main problems together with potential solutions.

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11:00 - 11:30 

Coffee break

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11:30 - 12:00 

Future Logic Devices Based on 2D Materials​

Chelsey Dorow (Intel, BE)​

2D materials show potential for the replacement of Si channels for transistors of highly scaled gate length below 10nm and may therefore provide an opportunity to continue Moore’s Law scaling beyond Si. We discuss the manufacturability of 2D materials and identify the key process developments required to enable 2D CMOS as a viable technology. Integration options for 2D stacked nanosheet transistors are proposed along with a benchmark of today’s 2D transistor performance with respect to Si.

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12:00 - 12:30

Integrating 2D Materials-Based Memristors in Silicon Microchips​

Mario Lanza (National University of Singapore, SG)​

Two-dimensional (2D) semiconducting materials (MoS2, WS2) are being proposed as replacement of silicon as channel in field effect transistors. It is believed that 2D semiconductors could provide high carriers’ mobility in ultra-scaled nodes, better electrostatic control over the on/off switching process, enhanced subthreshold swing, reduced short-channel effect, and low power consumption. However, the local defects in the 2D semiconducting channel, either produced during the synthesis (native) or introduced during post processing (transfer, deposition of other materials), degrade the performance of the transistor, increase device-to-device variability, reduce yield, and can lead to multiple reliability issues and premature failure. Instead, memristors are electronic devices much more resilient to native defects, and top electronic performance has been achieved in 2D materials-based memristors, even when integrated on silicon microchips. In this talk I will review the status of 2D-materials-based memristor. I will also discuss the main technological challenges to face in the next years and provide some recommendations on how to solve them.

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12:30 - 13:00

Optoelectronic Applications with 2D Materials​

Stephan Suckow (AMO, DE)​

This talk will cover an overview and perspectives of different opto-electronic devices, namely photodetectors, modulators and heaters. The focus will be on graphene, but other materials like transition metal dichalcogenides will be covered as well.